. Electronic Components Datasheets ktc5027 free download

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SEMICONDUCTOR KTC5027 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 7 V DC IC 3 Collector Current A Pulse ICP 10 Base Current IB 1.5 A Collector Power Dissipation PC 50 W (Tc=25 ) Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=800V, IE=0 - - 10 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 A IC=1.5A, IB1=-IB2=0.3A Collector-Emitter Sustaning Voltage VCEX(SUS) 800 - - V L=2mH, Clamped Collector-Emitter Saturation Voltage VCE(sat) IC=1.5A, IB=0.3A - - 2 V Base-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=0.3A - - 1.5 V hFE (1) (Note) VCE=5V, IC=0.2A 15 - 40 DC Current Gain hFE (2) VCE=5V, IC=1A 8 - - Collector-Base Breakdown Voltage BVCBO IC=1mA, IE=0 1100 - - V Collector-Emitter Breakdown Voltage BVCEO IC=5mA, RBE=